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| Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 Features * Optimum for 90 W HiFi output * High forward current transfer ratio hFE * Low collector-emitter saturation voltage VCE(sat) * Full-pack package which can be installed to the heat sink with one screw 21.00.5 15.00.3 (0.7) 5.00.2 (3.2) 11.00.2 3.20.1 15.00.2 (3.5) Solder Dip 2.00.2 1.10.1 2.00.1 0.60.2 16.20.5 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating -160 -140 -5 -8 -15 100 3 150 -55 to +150 C C Unit V V V A A W 1 5.450.3 10.90.5 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package Internal Connection C B E Electrical Characteristics TC = 25C 3C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO ICEO IEBO hFE1 hFE2 * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions IC = -30 mA, IB = 0 VCB = -160 V, IE = 0 VCE = -140 V, IB = 0 VEB = -5 V, IC = 0 VCE = -5 V, IC = -1 A VCE = -5 V, IC = -7 A IC = -7 A, IB = -7 mA IC = -7 A, IB = -7 mA VCE = -10 V, IC = - 0.5 A, f = 1 MHz IC = -7 A, IB1 = -7 mA, IB2 = 7 mA VCC = -50 V 20 1.0 1.5 1.2 2 000 5 000 30 000 -2.5 -3.0 V V MHz s s s Min -140 -100 -100 -100 Typ Max Unit V A A A Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 Q S P 5 000 to 15 000 7 000 to 21 000 8 000 to 30 000 Publication date: March 2003 SJD00064BED 1 2SB1255 PC Ta 120 (1)TC=Ta (2)With a 100x100x2mm Al heat sink (3)Without heat sink (PC=3W) IC VCE Collector-emitter saturation voltage VCE(sat) (V) -12 IB=-2mA -1mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA TC=25C VCE(sat) IC -100 IC/IB=1000 Collector power dissipation PC (W) 100 (1) 80 -10 Collector current IC (A) -8 -10 TC=100C 25C -25C 60 -6 40 -4 -0.4mA -0.3mA -1 20 (2) (3) 0 0 40 80 120 160 -2 -0.2mA 0 0 -2 -4 -6 -8 -10 -12 - 0.1 - 0.1 -1 -10 -100 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector current IC (A) VBE(sat) IC -100 IC/IB=1000 hFE IC VCE=-5V 25C TC=100C Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 1 000 IE=0 f=1MHz TC=25C 105 Base-emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 104 -25C -10 100 103 TC=-25C -1 100C 25C 10 102 - 0.1 - 0.1 -1 -10 -100 10 - 0.01 - 0.1 -1 -10 1 -1 -10 -100 Collector current IC (A) Collector current IC (A) Collector-base voltage VCB (V) ton , tstg , tf IC Turn-on time ton , Storage time tstg , Fall time tf (s) 100 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (-IB1=IB2) VCC=-50V TC=25C tstg tf Safe operation area -100 Non repetitive pulse TC=25C ICP Collector current IC (A) 10 -10 IC t=10ms t=1ms 1 ton -1 DC 0.1 - 0.1 0.01 0 -4 -8 -12 -16 - 0.01 -1 -10 -100 -1 000 Collector current IC (A) Collector-emitter voltage VCE (V) 2 SJD00064BED 2SB1255 Rth t 104 Note: Rth was measured at Ta=25C and under natural convection. (1)PT=10Vx0.3A(3W) and without heat sink (2)PT=10Vx1.0A(10W) and with a 100x100x2mm Al heat sink Thermal resistance Rth (C/W) 103 102 (1) 10 (2) 1 10-1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) SJD00064BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL This datasheet has been download from: www..com Datasheets for electronics components. |
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